Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/199153
Kind Code:
A1
Abstract:
Provided is a transistor that can be miniaturized. Provided is a transistor that occupies a small area. A semiconductor device for providing a transistor having a short channel length has a first insulating layer, a semiconductor layer, a gate insulating layer, a gate electrode, a first electrode, a second electrode, and a first electroconductive layer. The side surface of the first insulating layer is positioned on the first electrode. The second electrode is positioned on the first insulating layer. The semiconductor layer is in contact with the first electrode, the side surface of the first insulating layer, and the second electrode. The gate insulating layer has a portion facing the side surface with the semiconductor layer interposed therebetween. The gate electrode has a portion facing the side surface with the gate insulating layer and the semiconductor layer interposed therebetween. The first electroconductive layer is in contact with the gate electrode, has a portion facing the side surface with the gate electrode, the gate insulating layer, and the semiconductor layer interposed therebetween, and has a portion that is thicker than the gate electrode.
Inventors:
JINTYOU MASAMI
SHIMA YUKINORI
KOEZUKA JUNICHI (JP)
SASAGAWA SHINYA (JP)
SHIMA YUKINORI
KOEZUKA JUNICHI (JP)
SASAGAWA SHINYA (JP)
Application Number:
PCT/IB2023/053222
Publication Date:
October 19, 2023
Filing Date:
March 31, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/8234; H01L27/06; H01L27/088; H05B33/14; H10K50/10
Domestic Patent References:
| WO2018203181A1 | 2018-11-08 |
Foreign References:
| JP2016149552A | 2016-08-18 | |||
| JP2016146422A | 2016-08-12 | |||
| JP2020088378A | 2020-06-04 |
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