Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/228004
Kind Code:
A1
Abstract:
Provided is a semiconductor with a small occupied area. This semiconductor device has a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a fourth conductive layer, a first insulating layer, a second insulating layer, and a third insulating layer, wherein the first insulating layer is positioned on the first conductive layer, the second conductive layer is positioned on the first conductive layer with the first insulating layer interposed therebetween, the second insulating layer covers the upper surface and the lateral surface of the second conductive layer, the third conductive layer is positioned on the second insulating layer, the semiconductor layer is in contact with the upper surface of the first conductive layer, the lateral surface of the second insulating layer, and the third conductive layer, the third insulating layer is positioned on the semiconductor layer, and the fourth conductive layer is positioned on the semiconductor layer with the third insulating layer interposed therebetween.
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Inventors:
SHIMA YUKINORI
IGUCHI TAKAHIRO
OHNO MASAKATSU
DOBASHI MASAYOSHI
KOEZUKA JUNICHI (JP)
JINTYOU MASAMI
IGUCHI TAKAHIRO
OHNO MASAKATSU
DOBASHI MASAYOSHI
KOEZUKA JUNICHI (JP)
JINTYOU MASAMI
Application Number:
PCT/IB2023/055002
Publication Date:
November 30, 2023
Filing Date:
May 16, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/8234; H01L27/06; H01L27/088; H05B45/60; H10K50/10
Foreign References:
| JP2017168764A | 2017-09-21 | |||
| JP2017168761A | 2017-09-21 | |||
| JP2017168760A | 2017-09-21 | |||
| JP2017167452A | 2017-09-21 | |||
| JP2016149552A | 2016-08-18 |
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