Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/018851
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention comprises a first insulation layer, a first conductive layer, a second conductive layer, a first heat-dissipating layer, a first semiconductor element, a second semiconductor element, a conduction member, and a sealing resin. In relation to the first insulation layer, the first heat-dissipating layer is positioned on a side opposite the first conductive layer and the second conductive layer. The first semiconductor element has a first electrode conductively bonded to the first conductive layer, and a second electrode to which the conduction member is conductively bonded. The second semiconductor element has a third electrode to which the conduction member is conductively bonded, and a fourth electrode conductively bonded to the second conductive layer. The polarities of the second electrode and the third electrode are mutually different. The first heat-dissipating layer and the conduction member are exposed from the sealing resin.
Inventors:
FUJI KAZUNORI (JP)
Application Number:
PCT/JP2023/023728
Publication Date:
January 25, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L25/07; H01L23/29; H01L23/48; H01L25/18
Domestic Patent References:
| WO2020241472A1 | 2020-12-03 | |||
| WO2022118633A1 | 2022-06-09 |
Foreign References:
| JP2013021254A | 2013-01-31 | |||
| JP2019207922A | 2019-12-05 | |||
| JP2017054877A | 2017-03-16 |
Attorney, Agent or Firm:
USUI Takashi et al. (JP)
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