Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/053267
Kind Code:
A1
Abstract:
This semiconductor device (10) is provided with: a semiconductor layer (12); a cell trench (14) which is formed in the shape of a mesh in the semiconductor layer (12), while comprising a plurality of first trenches (24) that extend in a first direction when viewed in plan and a plurality of second trenches (26) that extend in a second direction that intersects with the first direction when viewed in plan so that the plurality of first trenches (24) and the plurality of second trenches (26) intersect with and in communication with each other; an insulating layer (16) which is formed on the semiconductor layer (12); a plurality of gate electrodes (28) which are respectively buried in the plurality of first trenches (24) by the intermediary of the insulating layer (16), while extending in the first direction; and a plurality of field plate electrodes (30) which are respectively buried in the plurality of second trenches (26) by the intermediary of the insulating layer (16), while extending in the second direction.
Inventors:
YOSHIDA KAZUKI (JP)
Application Number:
PCT/JP2023/026844
Publication Date:
March 14, 2024
Filing Date:
July 21, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L29/06
Foreign References:
| US20130105886A1 | 2013-05-02 | |||
| JP2021192400A | 2021-12-16 | |||
| JP2022045628A | 2022-03-22 | |||
| JP2012059943A | 2012-03-22 | |||
| US9252263B1 | 2016-02-02 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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