Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/058140
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a semiconductor substrate (10) which has a main surface (10a); a drift layer (31) of a first conductivity type, the drift layer being formed in a main surface (10a)-side surficial part; a drain region (32) of the first conductivity type, the drain region being formed in a surficial part of the drift layer (31); a body layer (34) of a second conductivity type, the body layer being formed in the main surface (10a)-side surficial part at a distance from the drift layer (31); a source region (35) of the first conductivity type, the source region being formed in a surficial part of the body layer (34); a gate insulating film (53) which is formed on the body layer (34); and a gate electrode (51) which is arranged on the gate insulating film (53). An element isolation insulating film (42), which performs element isolation of the source region (35) and the drain region (32) from each other, is arranged between the source region (35) and the drain region (32); a multilayer insulating film (52) is arranged on the element isolation insulating film (42); and the gate insulating film (53) is configured so as to contain the element isolation insulating film (42) and the multilayer insulating film (52).
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Inventors:
IKEURA SHOGO (JP)
YANAGI SHINICHIRO (JP)
YANAGI SHINICHIRO (JP)
Application Number:
PCT/JP2023/033089
Publication Date:
March 21, 2024
Filing Date:
September 11, 2023
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/786
Foreign References:
| JP2020021881A | 2020-02-06 | |||
| JP2017188585A | 2017-10-12 | |||
| JP2015073089A | 2015-04-16 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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