Title:
SEMICONDUCTOR DEVICES HAVING IMPROVED FIELD PLATES
Document Type and Number:
WIPO Patent Application WO2006107404
Kind Code:
A3
Abstract:
A field effect transistor device and method, such device having source and drain electrodes in ohmic contact with a semiconductor. A gate electrode-field plate structure is disposed between the source and drain electrodes. The gate electrode-field plate structure comprises: a dielectric; a first metal in Schottky contact with the semiconductor; and a second metal. The second metal has: a first portion disposed over and electrically connected to a portion of the first metal; and a second portion, separated from a second portion of the first metal by a portion of the dielectric and extending beyond an edge of the first metal to an edge of the second metal. The edge of the first metal is further from the drain electrode than the edge of the second metal to provide a field plate for the field effect transistor.
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Inventors:
HWANG KIUCHUL (US)
TONG ELSA K (US)
TONG ELSA K (US)
Application Number:
PCT/US2006/004788
Publication Date:
December 14, 2006
Filing Date:
February 10, 2006
Export Citation:
Assignee:
RAYTHEON CO (US)
HWANG KIUCHUL (US)
TONG ELSA K (US)
HWANG KIUCHUL (US)
TONG ELSA K (US)
International Classes:
H01L29/06; H01L29/423
Domestic Patent References:
| WO2005029589A1 | 2005-03-31 | |||
| WO1998049732A2 | 1998-11-05 |
Foreign References:
| US20040227204A1 | 2004-11-18 | |||
| US5559049A | 1996-09-24 | |||
| EP1478013A2 | 2004-11-17 | |||
| US4288806A | 1981-09-08 |
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