Title:
SEMICONDUCTOR ELEMENT DRIVE DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/203422
Kind Code:
A1
Abstract:
This semiconductor element drive device, by means of a power recovery function, reduces energy necessary for driving a gate, and prevents generation of a large current associated with arm short-circuiting, etc. A control circuit (150) executes short-circuiting protection control when generation of a short-circuit path associated with turning-on of a semiconductor element (10) is detected by a short-circuiting detection unit (160) during an on-period of a switching element (SW1) for turning the semiconductor element (10) on. In the short-circuiting protection control, periods for turning a switching element (SW4) on and for turning the switching element (SW1) off for cutting off the gate of the semiconductor element (10) and a DC power source (110), are provided. By turning the switching element (SW4) on, a current path through which the current flowing through a reactor (Lr) bypasses the gate, and a second path for discharging the gate, are formed.
Inventors:
ONDA KOHEI (JP)
KONDO RYOTA (JP)
TAN YOHEI (JP)
IWABUKI HIROYASU (JP)
KONDO RYOTA (JP)
TAN YOHEI (JP)
IWABUKI HIROYASU (JP)
Application Number:
PCT/JP2017/037323
Publication Date:
November 08, 2018
Filing Date:
October 16, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H02M1/08; H02M1/38; H02M3/155; H02M7/48
Foreign References:
| JP2006054954A | 2006-02-23 | |||
| JPH10337000A | 1998-12-18 | |||
| JP2015154701A | 2015-08-24 | |||
| JP2006230166A | 2006-08-31 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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