Title:
SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/024310
Kind Code:
A1
Abstract:
Provided is a semiconductor element wherein a reverse-direction leak current is suppressed, and mobility of a two-dimensional electron gas is high. This semiconductor element is provided with: an epitaxial substrate, which is formed by laminating, on a base substrate, a III nitride layer group such that the (0001) crystal plane is substantially parallel to the substrate surface; and a Schottky electrode. The epitaxial substrate is provided with: a channel layer formed of a first III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer formed of a second III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an intermediate layer, which is formed of GaN, and which is adjacent to the barrier layer; and a cap layer, which is formed of AlN, and which is adjacent to the intermediate layer. The Schottky electrode is formed by being bonded to the cap layer.
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Inventors:
SUGIYAMA TOMOHIKO (JP)
MAEHARA SOTA (JP)
SUMIYA SHIGEAKI (JP)
TANAKA MITSUHIRO (JP)
MAEHARA SOTA (JP)
SUMIYA SHIGEAKI (JP)
TANAKA MITSUHIRO (JP)
Application Number:
PCT/JP2012/070521
Publication Date:
February 13, 2014
Filing Date:
August 10, 2012
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
SUGIYAMA TOMOHIKO (JP)
MAEHARA SOTA (JP)
SUMIYA SHIGEAKI (JP)
TANAKA MITSUHIRO (JP)
SUGIYAMA TOMOHIKO (JP)
MAEHARA SOTA (JP)
SUMIYA SHIGEAKI (JP)
TANAKA MITSUHIRO (JP)
International Classes:
H01L29/778; H01L21/338; H01L29/812
Domestic Patent References:
| WO2012014675A1 | 2012-02-02 |
Foreign References:
| JP2012119638A | 2012-06-21 | |||
| JP2000294768A | 2000-10-20 | |||
| JP2007103778A | 2007-04-19 |
Other References:
TOSHIHIDE KIKKAWA: "Highly Reliable 250W High Electron Mobility Transistor Power Amplifier", JPN. J. APPL. PHYS., vol. 44, 2005, pages 4896, XP001502263, DOI: doi:10.1143/JJAP.44.4896
STACIA KELLER; YI-FENG WU; GIACINTA PARISH; NAIQIAN ZIANG; JANE J. XU; BERND P. KELLER; STEVEN P. DENBAARS; UMESH K. MISHRA: "Gallium Nitride Based High Power Heterojunction Field Effect Transistors: process Development and Present Status at USCB", IEEE TRANS. ELECTRON DEVICES, vol. 48, 2001, pages 552, XP011017534
F. MEDJDOUB; J.-F. CARLIN; M. GONSCHOREK; E. FELTIN; M.A. PY; D. DUCATTEAU; C. GAQUIERE; N. GRANDJEAN; E. KOHN: "Can InAN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?", IEEE IEDM TECH. DIGEST IN IEEE IEDM, 2006, pages 673
See also references of EP 2720257A4
STACIA KELLER; YI-FENG WU; GIACINTA PARISH; NAIQIAN ZIANG; JANE J. XU; BERND P. KELLER; STEVEN P. DENBAARS; UMESH K. MISHRA: "Gallium Nitride Based High Power Heterojunction Field Effect Transistors: process Development and Present Status at USCB", IEEE TRANS. ELECTRON DEVICES, vol. 48, 2001, pages 552, XP011017534
F. MEDJDOUB; J.-F. CARLIN; M. GONSCHOREK; E. FELTIN; M.A. PY; D. DUCATTEAU; C. GAQUIERE; N. GRANDJEAN; E. KOHN: "Can InAN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?", IEEE IEDM TECH. DIGEST IN IEEE IEDM, 2006, pages 673
See also references of EP 2720257A4
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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