Title:
SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND PRODUCTION METHOD FOR SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/014675
Kind Code:
A1
Abstract:
Provided is a semiconductor element in which a reverse leakage current is minimized, and a Schottky barrier between a gate electrode and an epitaxial substrate is adequately strengthened. The semiconductor element is provided with: an epitaxial substrate in which a group of group III nitride layers is formed as a laminate in such a manner that the (0001) crystal surface is roughly parallel to the substrate surface; and a Schottky electrode. The epitaxial substrate is provided with: a channel layer comprising a first group III nitride composed of Inx1Aly1Gaz1N (x1 + y1 + z1 = 1; z1 > 0); a barrier layer comprising a second group III nitride composed of Inx2Aly2N (x2 + y2 = 1; x2 > 0; y2 > 0). The Schottky electrode is configured in such a manner as to be joined to the contact layer. In addition, heat treatment is carried out in a nitrogen atmosphere after the gate electrode has been formed.
Inventors:
MIYOSHI Makoto (1-11-33, Konomiya Inazawa-sh, Aichi 37, 〒4928137, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUMIYA Shigeaki (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
角谷 茂明 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 日本碍子株式会社内 Aichi, 〒4678530, JP)
ICHIMURA Mikiya (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUMIYA Shigeaki (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
角谷 茂明 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 日本碍子株式会社内 Aichi, 〒4678530, JP)
ICHIMURA Mikiya (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
Application Number:
JP2011/065938
Publication Date:
February 02, 2012
Filing Date:
July 13, 2011
Export Citation:
Assignee:
NGK INSULATORS, LTD. (2-56, Suda-cho Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
日本碍子株式会社 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 Aichi, 〒4678530, JP)
MIYOSHI Makoto (1-11-33, Konomiya Inazawa-sh, Aichi 37, 〒4928137, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUMIYA Shigeaki (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
角谷 茂明 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 日本碍子株式会社内 Aichi, 〒4678530, JP)
日本碍子株式会社 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 Aichi, 〒4678530, JP)
MIYOSHI Makoto (1-11-33, Konomiya Inazawa-sh, Aichi 37, 〒4928137, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUMIYA Shigeaki (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
角谷 茂明 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 日本碍子株式会社内 Aichi, 〒4678530, JP)
International Classes:
H01L21/338; H01L21/28; H01L29/41; H01L29/423; H01L29/49; H01L29/778; H01L29/812
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (10th floor, Sumitomo-seimei OBP Plaza Bldg. 4-70, Shiromi 1-chome, Chuo-ku, Osaka-sh, Osaka 01, 〒5400001, JP)
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Claims: