SEMICONDUCTOR ELEMENT AND INSULATING-LAYER-FORMING COMPOSITION

Title:

SEMICONDUCTOR ELEMENT AND INSULATING-LAYER-FORMING COMPOSITION

Document Type and Number:

WIPO Patent Application WO/2015/146926

Kind Code:

A1

Abstract:

A semiconductor element that has a semiconductor layer and an insulating layer adjacent to said semiconductor layer. The insulating layer is formed by cross-linking a macromolecular compound that has both a repeat unit (IA) that can be represented by general formula (IA) and a repeat unit (IB) that can be represented by general formula (IB). General formula (IA) General formula (IB) In general formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group; L1a and L2a each independently represent either a single bond or a linking group; X represents a cross-linkable group; m2a represents an integer from 1 to 5; if said integer is greater than or equal to 2, the m2a Xs may be the same as or different from each other; m1a represents an integer from 1 to 5; and if said integer is greater than or equal to 2, the m1a (-L2a-(X)m2a)s may be the same as or different from each other. In general formula (IB), R1b represents a hydrogen atom, a halogen atom, or an alkyl group; L1b represents a single bond or a linking group; Ar1b represents an aromatic ring; and m1b represents an integer from 1 to 5.

Inventors:

NAGATA YUZO (JP)
TAKIZAWA HIROO (JP)
TSUCHIMURA TOMOTAKA (JP)
TSURUTA TAKUYA (JP)

Application Number:

PCT/JP2015/058775

Publication Date:

October 01, 2015

Filing Date:

March 23, 2015

Export Citation:

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Assignee:

FUJIFILM CORP (JP)

International Classes:

H01L21/312; C08F212/00; C08F220/10; H01L21/283; H01L29/786; H01L51/05; H01L51/30

Domestic Patent References:

WO2014030441A1

2014-02-27

Foreign References:

JP2014024999A

2014-02-06

Other References: