Title:
SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2015/170577
Kind Code:
A1
Abstract:
A semiconductor element which comprises a semiconductor layer and an insulating layer that is adjacent to the semiconductor layer, and wherein the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by general formula (IA) and a repeating unit (IB) represented by general formula (IB); and an insulating layer-forming composition for forming an insulating layer of a semiconductor element, which contains a polymer compound that has the repeating structures (IA) and (IB). (In general formulae, each of R1a and R1b independently represents a hydrogen atom, a halogen atom or an alkyl group; each of L1a, L2a and L1b independently represents a single bond or a linking group; X represents a crosslinkable group; YB represents a decomposable group or a hydrogen atom; each of m1a and m2a independently represents an integer of 1-5; and each * represents a bonding position of the repeating units.)
Inventors:
NAGATA YUZO (JP)
TAKIZAWA HIROO (JP)
YAMADA SATORU (JP)
TAKIZAWA HIROO (JP)
YAMADA SATORU (JP)
Application Number:
PCT/JP2015/062066
Publication Date:
November 12, 2015
Filing Date:
April 21, 2015
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L51/30; C08F212/14; C08F220/02; H01L29/786; H01L51/05
Foreign References:
| JP2014039010A | 2014-02-27 | |||
| JP2012195580A | 2012-10-11 | |||
| JP2013210616A | 2013-10-10 |
Other References:
See also references of EP 3142160A4
Attorney, Agent or Firm:
IIDA, Toshizo et al. (JP)
Toshizo Iida (JP)
Toshizo Iida (JP)
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