Title:
SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/006526
Kind Code:
A1
Abstract:
The present invention relates to a semiconductor element and a method for manufacturing same, wherein the semiconductor element may comprise: a base element, an intermediate layer formed in at least one direction of the base element; and a metal layer formed on the intermediate layer in a direction opposite to the base element, and wherein a conductive filament may be formed inside the intermediate layer according to the application of a voltage to the intermediate layer.
Inventors:
YU HYUN-YONG (KR)
KIM SEUNG-HWAN (KR)
KIM SEUNG-HWAN (KR)
Application Number:
PCT/KR2020/008531
Publication Date:
January 14, 2021
Filing Date:
June 30, 2020
Export Citation:
Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
H01L21/02; H01L29/788; H01L21/768; H01L29/66; H01L29/778; H01L29/78; H01L29/808
Foreign References:
| KR101568234B1 | 2015-11-12 | |||
| KR101382835B1 | 2014-04-08 | |||
| KR20170109170A | 2017-09-28 | |||
| JP2008243992A | 2008-10-09 |
Other References:
KIM SEUNG-HWAN, KIM GWANG-SIK, PARK JUNE, LEE CHANGMIN, KIM HYOUNGSUB, KIM JIYOUNG, SHIM JOON HYUNG, YU HYUN-YONG: "Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement", ACS APPLIED MATERIALS & INTERFACES, AMERICAN CHEMICAL SOCIETY, US, vol. 10, no. 31, 8 August 2018 (2018-08-08), US, pages 26378 - 26386, XP055772532, ISSN: 1944-8244, DOI: 10.1021/acsami.8b07066
Attorney, Agent or Firm:
KIM, Hong Suk (KR)
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