Title:
SEMICONDUCTOR ELEMENT PRODUCTION METHOD, AND SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/167290
Kind Code:
A1
Abstract:
This semiconductor element production method comprises: a step of forming a fixing layer 110 which is a thin film that binds at least a portion of the main surface on the side facing away from a base material substrate 101 side of a semiconductor thin film layer and at least a portion of the surface on the semiconductor thin film layer side of the base material substrate 101; a step of removing a part of the semiconductor thin film layer or the base material substrate 101 to form a gap; a step, after forming the gap, of binding to the fixed layer 110, an organic material layer formed on a pick-up substrate 200 on the main surface of the semiconductor thin film layer; a step of moving the pick-up substrate 200 in a distancing direction from the base material substrate 101 while the organic material layer is in a bound state to the fixing layer, thereby separating the semiconductor thin film layer from the first substrate; and a step of joining to the second substrate the semiconductor thin film layer that has been separated from the base material substrate 101.
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Inventors:
OGIHARA MITSUHIKO (JP)
Application Number:
PCT/JP2018/012370
Publication Date:
September 06, 2019
Filing Date:
March 27, 2018
Export Citation:
Assignee:
FILNEX INC (JP)
International Classes:
H01L21/02
Foreign References:
| JP2003249631A | 2003-09-05 | |||
| JP2016040828A | 2016-03-24 | |||
| JP2010258352A | 2010-11-11 |
Attorney, Agent or Firm:
IZUMI Michihiro (JP)
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