Title:
SEMICONDUCTOR ELEMENT, SEMICONDUCTOR SENSOR AND SEMICONDUCTOR MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2004/084322
Kind Code:
A1
Abstract:
A semiconductor element, a semiconductor sensor and a semiconductor memory element in which an MFMIS structure having a lower electrode can be integrated with an integrated circuit. A &gammad -Al2O3 single crystal film (2) is grown epitaxially on a semiconductor single crystal substrate (1), and a single crystal Pt thin film (3) is grown epitaxially on the&gammad -Al2O3 single crystal film (2).
Inventors:
ISHIDA MAKOTO (JP)
SAWADA KAZUAKI (JP)
AKAI DAISUKE (JP)
YOKAWA MIKAKO (JP)
HIRABAYASHI KEISUKE (JP)
SAWADA KAZUAKI (JP)
AKAI DAISUKE (JP)
YOKAWA MIKAKO (JP)
HIRABAYASHI KEISUKE (JP)
Application Number:
PCT/JP2004/002889
Publication Date:
September 30, 2004
Filing Date:
March 05, 2004
Export Citation:
Assignee:
JAPAN SCIENCE & TECH AGENCY (JP)
ISHIDA MAKOTO (JP)
SAWADA KAZUAKI (JP)
AKAI DAISUKE (JP)
YOKAWA MIKAKO (JP)
HIRABAYASHI KEISUKE (JP)
ISHIDA MAKOTO (JP)
SAWADA KAZUAKI (JP)
AKAI DAISUKE (JP)
YOKAWA MIKAKO (JP)
HIRABAYASHI KEISUKE (JP)
International Classes:
H01L21/336; H01L21/8246; H01L21/8247; H01L29/78; H01L27/105; H01L29/788; H01L29/792; H01L37/02; (IPC1-7): H01L37/02; H01L27/10; H01L29/788; H01L41/08
Foreign References:
| JPH0989651A | 1997-04-04 | |||
| JP2002289793A | 2002-10-04 | |||
| JP2002151654A | 2002-05-24 | |||
| US6139971A | 2000-10-31 |
Attorney, Agent or Firm:
Shimizu, Mamoru (7-10 Kanda-mitoshiro-ch, Chiyoda-ku Tokyo, JP)
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