Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2003/041234
Kind Code:
A1
Abstract:
A semiconductor element comprising an active layer (12) of quantum well structure having a well layer (1) and a barrier layer (2) sandwiched by a first conductive layer (11) and a second conductive layer (12). A first barrier layer (2a) on the side of the first conductive layer (11) and a second barrier layer (2b) on the side of the second conductive layer (12) are provided in the active layer while sandwiching at least one well layer (1a). The second barrier layer (2b) has a band gap energy lower than that of the first barrier layer (2a) and the barrier layer is asymmetric. More preferably, a carrier confinement layer (28) having a band gap energy higher than that of the first barrier layer (2a) is provided in the second conductive layer (12) so that both conductive layers sandwiching the active layer are provided with a band structure reversed as compared to the asymmetric structure of the active layer. In a semiconductor element, especially a light emitting element or a laser element employing a nitride semiconductor, an active layer and an element structure exhibiting excellent emission efficiency are realized in a short wavelength region of 380 nm.
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Inventors:
YANAMOTO TOMOYA (JP)
Application Number:
PCT/JP2002/011491
Publication Date:
May 15, 2003
Filing Date:
November 05, 2002
Export Citation:
Assignee:
NICHIA CORP (JP)
YANAMOTO TOMOYA (JP)
YANAMOTO TOMOYA (JP)
International Classes:
H01L33/06; H01L33/32; H01L33/42; H01S5/343; H01L33/04; H01S5/20; H01S5/30; H01S5/32; H01S5/34; (IPC1-7): H01S5/343
Domestic Patent References:
| WO1999016156A1 | 1999-04-01 |
Foreign References:
| JPH10126006A | 1998-05-15 | |||
| JP2000196194A | 2000-07-14 | |||
| JPH11340580A | 1999-12-10 | |||
| JP2000091708A | 2000-03-31 | |||
| JPH1174607A | 1999-03-16 | |||
| JP2001168471A | 2001-06-22 | |||
| EP0661782A1 | 1995-07-05 |
Other References:
See also references of EP 1453160A4
Attorney, Agent or Firm:
Ishii, Hisao (3-7 Shiromi 1-chom, Chuo-ku Osaka-shi Osaka, JP)
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