Title:
SEMICONDUCTOR ENERGY SENSOR
Document Type and Number:
WIPO Patent Application WO/2001/048826
Kind Code:
A1
Abstract:
A semiconductor energy sensor having regions for sensing energy and storing/transferring charge having a two-dimensional pixel array on a semiconductor substrate which an energy beam enters, characterized in that each of the regions is provided with transfer electrodes in each pixel and excess charge dumping means provided to one of the transfer electrodes in each pixel.
Inventors:
AKAHORI HIROSHI (JP)
Application Number:
PCT/JP2000/009140
Publication Date:
July 05, 2001
Filing Date:
December 22, 2000
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
AKAHORI HIROSHI (JP)
AKAHORI HIROSHI (JP)
International Classes:
H01L27/148; (IPC1-7): H01L27/148; H01L31/115; H04N5/335; G01J1/02
Foreign References:
| JPS5424530A | 1979-02-23 |
Other References:
"Denshi no me no shikumi (Japan) Kabushiki Kaisha Nihon Rikou Shuppankai", KOTAI EIZOU SOSHI NO KISO, 10 December 1999 (1999-12-10), pages 103 - 106, XP002938030
Attorney, Agent or Firm:
Hasegawa, Yoshiki (Ginza 2-chome Chuo-ku Tokyo, JP)
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