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Title:
SEMICONDUCTOR ETCHING SOLUTION
Document Type and Number:
WIPO Patent Application WO/2023/286666
Kind Code:
A1
Abstract:
Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.

Inventors:
MIZUTANI ATSUSHI (JP)
BJELOPAVLIC MICK (US)
BALLESTEROS CARL (US)
Application Number:
PCT/JP2022/026794
Publication Date:
January 19, 2023
Filing Date:
July 06, 2022
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
FUJIFILM ELECTRONIC MAT USA INC (US)
International Classes:
H01L21/308; H01L21/3065
Foreign References:
US20180294165A12018-10-11
US20190103282A12019-04-04
US20200211856A12020-07-02
US20040063286A12004-04-01
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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