Title:
SEMICONDUCTOR FABRICATION SYSTEM, AND FLOW RATE CORRECTION METHOD AND PROGRAM FOR SEMICONDUCTOR FABRICATION SYSTEM
Document Type and Number:
WIPO Patent Application WO/2007/023614
Kind Code:
A1
Abstract:
Zero shift amount based on thermal siphon phenomenon occurring actually when a
substrate is processed is detected accurately and corrected suitably. The semiconductor
fabrication system comprises a gas supply passage (210) for supplying gas into
a heat treatment section (110), an MFC (240) for comparing an output voltage from
a detecting section for detecting the gas flow rate of the gas supply passage with
a set voltage corresponding to a preset flow rate and controlling the gas flow
rate of the gas supply passage to the set flow rate, and a control section (300). The
control section replaces gas in the MFC by gas which is to be used at least for processing
a substrate before the substrate is processed, detects the output voltage from
the MFC under a state where valves (230, 250) provided in the upstream and the downstream
of the MFC are closed and stores the detected output voltage in a storage means,
corrects the set voltage corresponding to the flow rate of gas to be used for processing
the substrate based on the output voltage from the MFC stored in the storage means
at the time of processing the substrate, and sets the corrected set voltage in
the MFC.
More Like This:
Inventors:
MORIYA SHUJI (JP)
OKABE TSUNEYUKI (JP)
EBI HIROYUKI (JP)
SHIMIZU TETSUO (JP)
KITAGAWA HITOSHI (JP)
OKABE TSUNEYUKI (JP)
EBI HIROYUKI (JP)
SHIMIZU TETSUO (JP)
KITAGAWA HITOSHI (JP)
Application Number:
PCT/JP2006/312863
Publication Date:
March 01, 2007
Filing Date:
June 28, 2006
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
MORIYA SHUJI (JP)
OKABE TSUNEYUKI (JP)
EBI HIROYUKI (JP)
SHIMIZU TETSUO (JP)
KITAGAWA HITOSHI (JP)
MORIYA SHUJI (JP)
OKABE TSUNEYUKI (JP)
EBI HIROYUKI (JP)
SHIMIZU TETSUO (JP)
KITAGAWA HITOSHI (JP)
International Classes:
H01L21/324; G01F1/00; G05D7/06; H01L21/02; H01L21/205
Foreign References:
| JP2005038058A | 2005-02-10 | |||
| JP2004003957A | 2004-01-08 |
Attorney, Agent or Firm:
OHYAMA, Hiroaki (2-14 Akasaka 6-chom, Minato-ku Tokyo 52, JP)
Download PDF: