SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2021/210476

A1

Provided are a semiconductor film with few killer defects, said semiconductor film comprising β-Ga2O3-based single crystal, and a method for manufacturing the same.　In one embodiment, the present invention provides a method for manufacturing a semiconductor film 12, said method comprising a step for placing a semiconductor substrate 10, which comprises β-Ga2O3-based single crystal, in a reaction chamber 20 of an HVPE apparatus 2 in such a manner that a growth substrate surface 11 faces upward, and a step for flowing a Ga chloride gas, an oxygen-containing gas and a dopant-containing gas into a space 24 in the reaction chamber 20, in which the semiconductor substrate 10 is placed, and thus epitaxially growing the semiconductor film 12, which comprises β-Ga2O3-based single crystal, on the growth substrate surface 11 of the semiconductor substrate 10, wherein the flow inlet of the dopant-containing gas to the space 24 is positioned higher than the flow inlet of the oxygen-containing gas to the space 24, and the flow inlet of the Ga chloride gas to the space 24 is positioned higher than the flow inlet of the dopant-containing gas to the space 24.

THIEU QUANG TU (JP)
SASAKI KOHEI (JP)

PCT/JP2021/014834

October 21, 2021

April 07, 2021

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TAMURA SEISAKUSHO KK (JP)
NOVEL CRYSTAL TECH INC (JP)

C30B25/14; C23C16/40; C23C16/455; C30B25/20; C30B29/16; H01L21/365

WO2018185850A1

2018-10-11

JP2019163200A	2019-09-26
JP2016175807A	2016-10-06
JP2014094839A	2014-05-22

TAMURA CORPORATION (JP)

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