Title:
SEMICONDUCTOR FILM
Document Type and Number:
WIPO Patent Application WO/2020/261574
Kind Code:
A1
Abstract:
The present invention provides an α-Ga2O3 semiconductor film which is capable of making the device characteristics uniform. This α-Ga2O3 semiconductor film has, as the main phase, a crystal having a corundum crystal structure that is composed of α-Ga2O3 or an α-Ga2O3-based solid solution. This semiconductor film has a circular shape that has a diameter of 5.08 cm (2 inches) or more, and if an X-ray diffraction (XRD) ϕ scanning measurement is performed with respect to the (104) plane of the crystal on the center point X of the surface and four points A, B, C and D on the outer periphery of the semiconductor film, the ratio of the peak intensity of a sub peak assigned to a rotation domain to the peak intensity of the main peak is 1.00% or less. The points A, B, C and D on the outer periphery are determined so that (i) the straight line connecting the points A and C on the outer periphery and the straight line connecting the points B and D on the outer periphery are at right angles to each other at the center point X, and (ii) the respective shortest distances of the points A, B, C and D on the outer periphery from the outer edge of the semiconductor film is 1/5 of the radium of the semiconductor film.
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Inventors:
YOSHIKAWA JUN (JP)
WATANABE MORIMICHI (JP)
FUKUI HIROSHI (JP)
WATANABE MORIMICHI (JP)
FUKUI HIROSHI (JP)
Application Number:
PCT/JP2019/025963
Publication Date:
December 30, 2020
Filing Date:
June 28, 2019
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H01L21/365; C23C16/40; C30B29/16; H01L21/368; H01L29/24
Foreign References:
| JP2016146442A | 2016-08-12 | |||
| JP2016157878A | 2016-09-01 | |||
| JP2016155714A | 2016-09-01 |
Attorney, Agent or Firm:
TAKAMURA Masaharu et al. (JP)
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