Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/242673
Kind Code:
A1
Abstract:
Provided in the present disclosure are a semiconductor integrated circuit device and a manufacturing method therefor. In the semiconductor integrated circuit device, an electrode in a resistance random access memory cell is directly connected to a metal layer, thereby omitting the steps of filling a connection via by using other metal materials (e.g. tungsten) and performing polishing. In this way, manufacturing processes are reduced, and different degrees of recesses caused by polishing are also correspondingly reduced, such that the uniformity of the resistance performance of a resistance random access memory is improved, and the quality of the semiconductor integrated circuit device is higher. In addition, according to the embodiments of the present disclosure, a resistance layer of a trench structure is formed by skillfully using a trench where an original connection via is located, thereby embedding the entire resistance random access memory cell into the trench where the original connection via is located, such that the structure of a single resistance random access memory cell is more compact, the gap between resistance random access memory cells is smaller, and the requirements for miniaturization and high density can thus be better met.
Inventors:
CHIU TAI WEI (CN)
SHAN LIJUN (CN)
SHEN TING YING (CN)
SHAN LIJUN (CN)
SHEN TING YING (CN)
Application Number:
PCT/CN2022/093538
Publication Date:
November 24, 2022
Filing Date:
May 18, 2022
Export Citation:
Assignee:
XIAMEN INDUSTRIAL TECH RESEARCH INSTITUTE CO LTD (CN)
International Classes:
H01L45/00
Foreign References:
| CN113380947A | 2021-09-10 | |||
| CN104051617A | 2014-09-17 | |||
| US20100155687A1 | 2010-06-24 | |||
| CN109411601A | 2019-03-01 |
Attorney, Agent or Firm:
BEIJING LEPATENT INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)
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