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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND WIRE FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2008/029956
Kind Code:
A1
Abstract:
Provided is a semiconductor integrated circuit device, in which a 3IP(isopropyl-radical)-3V(vinyl-radical)-cyclohexane (OCS) film (20) to appear simultaneously with a copper wiring layer (7) is used, as a film to be formed between copper wires, when the wiring layer is formed. The semiconductor integrated circuit device is characterized by using a barrier property of the OCS film against a copper ion drift. The wire is formed by forming a conductive layer containing copper over an insulating film (4), by patterning the conductive layer to form wires, by forming the OCS film at least between the wires, and by laminating another insulating film on the surface. Alternatively, the wire is formed by forming wiring pattern grooves in an insulating layer having the OCS film on the surface, by forming a conductive layer containing copper, by burying by the Damascene or etch-back method using the OCS film for a terminal detection, and by forming another insulating film on the surface.

Inventors:
YOSHINO, Takenobu (1-1-1 Higashi, Tsukuba-sh, Ibaraki 68, 3058568, JP)
吉野 雄信 (〒68 茨城県つくば市東1-1-1 独立行政法人産業技術総合研究所内 Ibaraki, 3058568, JP)
HATA, Nobuhiro (1-1-1 Higashi, Tsukuba-sh, Ibaraki 68, 3058568, JP)
Application Number:
JP2007/067778
Publication Date:
March 13, 2008
Filing Date:
September 06, 2007
Export Citation:
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Assignee:
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1 Kasumigaseki 1-chome, Chiyoda-ku Tokyo, 21, 1008921, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関一丁目3番1号 Tokyo, 1008921, JP)
NEC CORPORATION (5-7-1, Shiba Minato-k, Tokyo 01, 1088001, JP)
日本電気株式会社 (〒01 東京都港区芝5-7-1 Tokyo, 1088001, JP)
YOSHINO, Takenobu (1-1-1 Higashi, Tsukuba-sh, Ibaraki 68, 3058568, JP)
International Classes:
H01L21/768; H01L21/312; H01L21/3205; H01L23/52; H01L23/522; H01L21/70; H01L21/02; H01L23/52
Attorney, Agent or Firm:
FUKUDA, Kenzo et al. (Kashiwaya Bldg, 6-13 Nishishinbashi 1-chome, Minato-k, Tokyo 03, 1050003, JP)
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