SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND WIRE FORMING METHOD

WIPO Patent Application WO/2008/029956

A1

Provided is a semiconductor integrated circuit device, in which a 3IP(isopropyl-radical)-3V(vinyl-radical)-cyclohexane (OCS) film (20) to appear simultaneously with a copper wiring layer (7) is used, as a film to be formed between copper wires, when the wiring layer is formed. The semiconductor integrated circuit device is characterized by using a barrier property of the OCS film against a copper ion drift. The wire is formed by forming a conductive layer containing copper over an insulating film (4), by patterning the conductive layer to form wires, by forming the OCS film at least between the wires, and by laminating another insulating film on the surface. Alternatively, the wire is formed by forming wiring pattern grooves in an insulating layer having the OCS film on the surface, by forming a conductive layer containing copper, by burying by the Damascene or etch-back method using the OCS film for a terminal detection, and by forming another insulating film on the surface.

YOSHINO TAKENOBU (JP)
HATA NOBUHIRO (JP)
KAWAHARA JUN (JP)

PCT/JP2007/067778

March 13, 2008

September 06, 2007

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NAT INST OF ADVANCED IND SCIEN (JP)
NEC CORP (JP)
YOSHINO TAKENOBU (JP)
HATA NOBUHIRO (JP)
KAWAHARA JUN (JP)

H01L21/768; H01L21/312; H01L21/3205; H01L23/52; H01L23/522

WO2005053009A1

2005-06-09

JP2005175060A	2005-06-30
JP2005051192A	2005-02-24

FUKUDA, Kenzo et al. (6-13 Nishishinbashi 1-chome, Minato-k, Tokyo 03, JP)

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