Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/248772
Kind Code:
A1
Abstract:
A semiconductor integrated circuit device according to the present invention comprises a plurality of standard cells (cells) having nanosheet field effect transistors (FETs). A cell 1 includes a nanosheet FET that includes buried power rails (11A, 12A) which extend in the X direction and nanosheets (21A, 21B) which extend in the X direction. A cell 2 includes a nanosheet FET that includes buried power rails (11B, 12B) which are larger in size in the Y direction than the buried power rails (11A, 12A) and nanosheets (21B, 22B) which are larger in size in the Y direction than the nanosheets (21A, 22A).
Inventors:
KOMURO HIDEYUKI (JP)
Application Number:
PCT/JP2023/020840
Publication Date:
December 28, 2023
Filing Date:
June 05, 2023
Export Citation:
Assignee:
SOCIONEXT INC (JP)
International Classes:
H01L21/82; H01L21/8238; H01L27/092
Domestic Patent References:
| WO2021075434A1 | 2021-04-22 | |||
| WO2018025597A1 | 2018-02-08 |
Foreign References:
| US20200402968A1 | 2020-12-24 | |||
| US20170033102A1 | 2017-02-02 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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