Title:
SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH-FREQUENCY MODULE
Document Type and Number:
WIPO Patent Application WO/2022/065015
Kind Code:
A1
Abstract:
This semiconductor IC (130) comprises: a first high-frequency element (for example, an inductor (218) of a low-noise amplifier (21)); a second high-frequency element (for example, an inductor (215) of a low-noise amplifier (22)); and a first via conductor (for example, a via conductor (131)) that is disposed between the first high-frequency element and the second high-frequency element and is connected to the ground potential.
Inventors:
NISHIKAWA HIROSHI (JP)
Application Number:
PCT/JP2021/032736
Publication Date:
March 31, 2022
Filing Date:
September 06, 2021
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H03H7/075; H03H7/46; H03H9/70; H03H9/72; H04B1/38
Domestic Patent References:
| WO2020066380A1 | 2020-04-02 | |||
| WO2019208371A1 | 2019-10-31 | |||
| WO2018088410A1 | 2018-05-17 |
Foreign References:
| JP2005033350A | 2005-02-03 | |||
| US20170353211A1 | 2017-12-07 |
Attorney, Agent or Firm:
YOSHIKAWA, Shuichi et al. (JP)
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