Title:
SEMICONDUCTOR LASER DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR LASER DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/039475
Kind Code:
A1
Abstract:
The present invention is characterized by comprising: forming a laminate structure in a shape having a mesa stripe structure, the laminate structure having a lower clad layer, an active layer, and an upper clad layer laminated on an InP substrate; forming a first insulation film on the laminate structure by a sputtering method; forming a second insulation film that is thinner than the first insulation film on the first insulation film by a plasma CVD method at a higher film deposition temperature than when forming the first insulation film; and forming a first electrode on the upper clad layer and forming a second electrode on the rear surface of the InP substrate.
Inventors:
SAKUMA HITOSHI (JP)
Application Number:
PCT/JP2018/030657
Publication Date:
February 27, 2020
Filing Date:
August 20, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/22
Domestic Patent References:
| WO2018109982A1 | 2018-06-21 | |||
| WO2001026193A1 | 2001-04-12 |
Foreign References:
| JP2016167486A | 2016-09-15 | |||
| JP2005116659A | 2005-04-28 | |||
| JP2005167118A | 2005-06-23 | |||
| JP2010016281A | 2010-01-21 | |||
| JP2009212521A | 2009-09-17 | |||
| JP2008235319A | 2008-10-02 | |||
| JP2003347674A | 2003-12-05 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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