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Patent Searching and Data


Title:
SEMICONDUCTOR LASER DEVICE AND RESONANT CAVITY SURFACE PASSIVATION FILM THEREOF, AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/184064
Kind Code:
A1
Abstract:
A semiconductor laser device and a resonant cavity surface passivation film (100) thereof, and a manufacturing method. The resonant cavity surface passivation film (100) comprises: a passivation layer (101), directly covering a resonant cavity surface of a semiconductor laser device; and a protective layer (102), covering the passivation layer (101), wherein the protective layer (102) is made of wide-bandgap semiconductor materials formed by chemical bath deposition. By means of this method, the resonant cavity surface passivation film (100) is valid for a long time, the capability of a semiconductor laser device to resist catastrophic optical mirror damage can be improved, and the maximum output power of the semiconductor laser device can be increased, thus ensuring the reliability of the semiconductor laser device and prolonging the service life of the semiconductor laser device.

Inventors:
HU MARTIN HAI (CN)
HO JAMES (CN)
MIAO CHUNYU (CN)
Application Number:
CN2018/087376
Publication Date:
October 03, 2019
Filing Date:
May 17, 2018
Export Citation:
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Assignee:
SHENZHEN RAYBOW OPTOELECTRONICS CO LTD (CN)
International Classes:
H01S5/028
Foreign References:
US5260231A1993-11-09
EP1058359A12000-12-06
CN104143760A2014-11-12
US20090257466A12009-10-15
CN101820134A2010-09-01
CN101453098A2009-06-10
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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