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Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
WIPO Patent Application WO/2002/003516
Kind Code:
A1
Abstract:
A stable, high-speed-operation, high-performance, high-reliability single-wavelength semiconductor laser device; which comprises, between an upper clad layer and a lower clad layer, an active area, a front light reflection area located in front of the active area, a rear light reflection area located behind the active area, and a phase control area located close to the active area, the front light reflection area and the rear light reflection area respectively being provided with alternating diffraction lattice units and non-diffraction units; and which oscillates at a wavelength corresponding to a value of current running through the diffraction lattice units, wherein current block layers for preventing the flow of current into the non-diffraction units are formed on the non-diffraction units of at least one of the front light reflection area and the rear light reflection area.

Inventors:
GOTODA MITSUNOBU (JP)
Application Number:
PCT/JP2000/004457
Publication Date:
January 10, 2002
Filing Date:
July 05, 2000
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
GOTODA MITSUNOBU (JP)
International Classes:
H01S5/0625; H01S5/042; H01S5/12; (IPC1-7): H01S5/125
Foreign References:
US5748660A1998-05-05
JPH10308556A1998-11-17
JPH05235481A1993-09-10
JPH06112570A1994-04-22
Other References:
S.L. WOODWARD ET AL.: "A DBR laser tunable by resistive heating", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 4, no. 12, 1992, pages 1330 - 1332, XP002932560
C.K. GARDINER ET AL.: "Three-section sampled-grating DBR lasers: modelling and measurements", IEE PROCEEDINGS-OPTOELECTRONICS, vol. 143, no. 1, 1996, pages 24 - 30, XP002932561
Attorney, Agent or Firm:
Aoyama, Tamotsu (Shiromi 1-chome Chuo-ku, Osaka-shi Osaka, JP)
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