Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/001914
Kind Code:
A1
Abstract:
This semiconductor laser device is provided with: a stem (1) as a base material; a laser diode (LD) sub-mount (2) having surface electrodes (20a, 20b) and joined to a surface of the stem (1); a LD chip (4) disposed on the surface electrode (20a) and connected to the surface electrode (20b); and leads (3a, 3b) which are electrically connected to the surface electrodes (20a, 20b) via embedded layers (21a, 21b) in via-holes (2c, 2d) provided in the LD sub-mount (2), and which are fixed, by means of sealing members (10a, 10b), in holes (1a, 1b) provided in the stem (1). Groove portions (10ad, 10bd) are provided around connecting portions between the sealing portions (10a, 10b) or the leads (3a, 3b) of the LD sub-mount (2) and the embedded layers (21a, 21b) on the side of joined surfaces of the stem (1) and the LD sub-mount (2) to obtain a good modulating light waveform.
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Inventors:
KOSAKA NAOKI (JP)
FUCHIDA AYUMI (JP)
SHIMADA MASAAKI (JP)
SAKAINO GO (JP)
TAKASE TADASHI (JP)
FUCHIDA AYUMI (JP)
SHIMADA MASAAKI (JP)
SAKAINO GO (JP)
TAKASE TADASHI (JP)
Application Number:
PCT/JP2019/026222
Publication Date:
January 07, 2021
Filing Date:
July 02, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/022
Domestic Patent References:
| WO2019116547A1 | 2019-06-20 |
Foreign References:
| JP2009295772A | 2009-12-17 | |||
| JP2006032765A | 2006-02-02 | |||
| JP2008198934A | 2008-08-28 | |||
| JP2013171879A | 2013-09-02 | |||
| JPS5858785A | 1983-04-07 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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