Title:
SEMICONDUCTOR LASER AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/146478
Kind Code:
A1
Abstract:
A semiconductor laser according to one embodiment of the present disclosure is provided with a semiconductor multilayer part. The semiconductor multilayer part sequentially comprises a first cladding layer, an active layer, one or more low-concentration impurity layers, a contact layer and a second cladding layer that is formed from a transparent conductive material, in this order. The semiconductor multilayer part additionally has a ridge, which extends in one direction within the lamination plane, in a portion that contains the contact layer. Each one of the low-concentration impurity layers has an impurity concentration of 5.0 × 1017 cm-3 or less; and the total film thickness of the low-concentration impurity layers is from 250 nm to 1,000 nm (inclusive). The distance between the second cladding layer and a low-concentration impurity layer that is closest to the second cladding layer is 150 nm or less.
Inventors:
TOKUDA KOTA (JP)
WATANABE HIDEKI (JP)
KAWASUMI TAKAYUKI (JP)
WATANABE HIDEKI (JP)
KAWASUMI TAKAYUKI (JP)
Application Number:
PCT/JP2019/001192
Publication Date:
August 01, 2019
Filing Date:
January 17, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01S5/20
Domestic Patent References:
| WO2013157176A1 | 2013-10-24 | |||
| WO2017017928A1 | 2017-02-02 |
Foreign References:
| JP2005150568A | 2005-06-09 | |||
| US20170077677A1 | 2017-03-16 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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