Title:
SEMICONDUCTOR LASER, ELECTRONIC EQUIPMENT, AND SEMICONDUCTOR LASER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/201813
Kind Code:
A1
Abstract:
The present technology provides a semiconductor laser in which it is possible to inhibit an impact to the properties of the laser while inhibiting a reduction in yield. A semiconductor laser according to the present technology comprises a resonator that has a laminated structure including a first cladding layer, a second cladding layer, and an active layer disposed between the first and second cladding layers and that has a pair of resonator end surfaces toward which the laminated structure is facing, wherein the resonator has a ridge structure extending in the lengthwise direction of the resonator on the surface thereof that is toward the second cladding layer; and a plurality of grooves are provided to at least one of a one-side section and an other-side section of the surface of the resonator that is toward the second cladding layer, the side sections being to either side of the ridge structure in plan view.
Inventors:
ISOZAKI YUTA (JP)
KIKUCHI YUICHIRO (JP)
KAWANISHI HIDEKAZU (JP)
MIZUNO TAKASHI (JP)
NOZAWA SHINSUKE (JP)
KIKUCHI YUICHIRO (JP)
KAWANISHI HIDEKAZU (JP)
MIZUNO TAKASHI (JP)
NOZAWA SHINSUKE (JP)
Application Number:
PCT/JP2022/002106
Publication Date:
September 29, 2022
Filing Date:
January 21, 2022
Export Citation:
Assignee:
SONY GROUP CORP (JP)
International Classes:
H01S5/22
Foreign References:
| US20200321749A1 | 2020-10-08 | |||
| JP2005191547A | 2005-07-14 | |||
| JPH02178989A | 1990-07-11 | |||
| JP2004014943A | 2004-01-15 | |||
| JP2005311308A | 2005-11-04 |
Attorney, Agent or Firm:
WATANABE Kaoru (JP)
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