Title:
SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/134950
Kind Code:
A1
Abstract:
The present invention is characterized by being provided with: a semiconductor substrate; a resonator unit that is formed on the semiconductor substrate and that has an active layer, the frond end surface of a reverse mesa inclined surface, and the rear end surface ; an anti-reflection coating film that is formed on the front end surface; a reflection film that is formed on the rear end surface; a diffraction grating that is formed on or under the active layer; an upper electrode that is formed on the resonator unit; and a lower electrode that is formed below the semiconductor substrate, wherein the length of the resonator unit in a resonator direction is shorter than that of the semiconductor substrate in the resonator direction, and a laser beam is emitted from the front end surface.
More Like This:
| WO/2001/022542 | MULTI-WAVELENGTH LASER SYSTEM |
| JPS614290 | DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER |
| JPH09129970 | LASER DIODE ELEMENT |
Inventors:
FUCHIDA AYUMI (JP)
OKUNUKI YUICHIRO (JP)
SAKAINO GO (JP)
UETSUJI TETSUYA (JP)
NAKAMURA NAOKI (JP)
OKUNUKI YUICHIRO (JP)
SAKAINO GO (JP)
UETSUJI TETSUYA (JP)
NAKAMURA NAOKI (JP)
Application Number:
PCT/JP2017/001769
Publication Date:
July 26, 2018
Filing Date:
January 19, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/12
Foreign References:
| JPS59152682A | 1984-08-31 | |||
| JP2003174229A | 2003-06-20 | |||
| JPS60152086A | 1985-08-10 | |||
| JPS6180885A | 1986-04-24 | |||
| JPS6079786A | 1985-05-07 | |||
| JP2016189437A | 2016-11-04 | |||
| JP2013239682A | 2013-11-28 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
Download PDF: