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Title:
SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/146321
Kind Code:
A1
Abstract:
This semiconductor laser element (1) is provided with: a first conductivity-type first semiconductor layer (20); an active layer (32) disposed over the first semiconductor layer (20); and a second conductivity-type second semiconductor layer (40) disposed over the active layer (32). A stacked structure (90), which includes the first semiconductor layer (20), the active layer (32), and the second semiconductor layer (40), includes a pair of opposing resonator end surfaces (95f and 95r) and a waveguide (90a) which is disposed between the pair of resonator end surfaces (95f and 95r) and formed with a diffraction grating (70). If a direction orthogonal to the pair of resonator end surfaces (95f and 95r) is a waveguide direction, the filling factor of the diffraction grating (70) in the waveguide direction is varied depending on the position in a direction orthogonal to the direction in which the waveguide direction and the stacked structure (90) are stacked.

Inventors:
HAGINO HIROYUKI
TANAKA TSUYOSHI
Application Number:
PCT/JP2018/046739
Publication Date:
August 01, 2019
Filing Date:
December 19, 2018
Export Citation:
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Assignee:
PANASONIC CORP (JP)
International Classes:
H01S5/12; H01S5/22
Domestic Patent References:
WO1999066614A11999-12-23
Foreign References:
JP2007184511A2007-07-19
JP2006202935A2006-08-03
JPS58196089A1983-11-15
JP2008028375A2008-02-07
JP2015138905A2015-07-30
JPH11220220A1999-08-10
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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