Title:
SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/022116
Kind Code:
A1
Abstract:
A semiconductor laser element (14) according to the present invention is provided with: an n-type cladding layer (32) which is arranged on top of an n-type semiconductor substrate (a chip substrate (24)); an active layer (40) which is arranged on top of the n-type cladding layer (32); and a p-type cladding layer which is arranged on top of the active layer (40). The active layer (40) comprises a well layer and a barrier layer; the energy band gap of the barrier layer is larger than the energy band gap of the n-type cladding layer (32); and the refractive index of the barrier layer is higher than the refractive index of the n-type cladding layer (32).
Inventors:
NAKATANI TOUGO
HATA MASAYUKI
HATA MASAYUKI
Application Number:
PCT/JP2019/027857
Publication Date:
January 30, 2020
Filing Date:
July 16, 2019
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01S5/343
Domestic Patent References:
| WO2002021578A1 | 2002-03-14 |
Foreign References:
| JP2014212186A | 2014-11-13 | |||
| JP2006186250A | 2006-07-13 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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