Title:
SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/070544
Kind Code:
A1
Abstract:
A semiconductor laser element (1) emits laser light and is provided with a substrate (10), a first semiconductor layer (20) arranged above the substrate (10), a light emitting layer (30) arranged above the first semiconductor layer (20), a second semiconductor layer (40) arranged above the light emitting layer (30), and a dielectric layer (60) arranged above the second semiconductor layer (40), wherein: the second semiconductor layer (40) has a waveguide section (40a) for guiding laser light; the width of at least one portion of the waveguide section (40a) is modulated relative to the position of the longitudinal direction of a resonator, which is the direction of the longer side of the waveguide section (40a); the waveguide section (40a) has a first waveguide section (40a1) and a second waveguide section (40a2) which is wider than the first waveguide section (40a1); and the difference in effective refractive index between the inner side of the waveguide section (40a) and the outer side of the waveguide section (40a) is larger in the second waveguide section (40a2) than in the first waveguide section (40a1).
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Inventors:
HAGINO HIROYUKI
Application Number:
PCT/JP2021/025862
Publication Date:
April 07, 2022
Filing Date:
July 08, 2021
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01S5/22; H01S5/343
Foreign References:
| JP2009033009A | 2009-02-12 | |||
| JP2002374035A | 2002-12-26 | |||
| US20180358777A1 | 2018-12-13 | |||
| JP2013021230A | 2013-01-31 | |||
| JP2021019033A | 2021-02-15 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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