Title:
SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/163237
Kind Code:
A1
Abstract:
This semiconductor laser element (10) comprises a substrate (21) and a semiconductor laminate (10S). The semiconductor laminate (10S) has an N-side semiconductor layer (22), an active layer (23), a P-side semiconductor layer (24), and a P-type contact layer (25). The semiconductor laminate (10S) has two end surfaces. A laser beam resonates between the two end surfaces. The semiconductor laminate (10S) has a ridge part (20r) extending in a resonance direction, and a bottom part (20b) surrounding the periphery of the ridge part (20r) in a top view of the semiconductor laminate (10S). The ridge part (20r) protrudes upward from the bottom part (20b), is spaced apart from the two end surfaces, and includes at least a portion of the P-type contact layer (25). A current injection window (25a), which is a region into which current is injected, is formed only on the ridge part (20r) of the upper surface of the semiconductor laminate (10S). The distance from the upper surface of the active layer (23) to the bottom part (20b) is uniform.
Inventors:
KUNOH YASUMITSU
YAMADA ATSUSHI
NAGAI HIROKI
NAKATANI TOGO
YANAGITA NAOTO
HATA MASAYUKI
YAMADA ATSUSHI
NAGAI HIROKI
NAKATANI TOGO
YANAGITA NAOTO
HATA MASAYUKI
Application Number:
PCT/JP2021/047705
Publication Date:
August 04, 2022
Filing Date:
December 22, 2021
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
International Classes:
H01S5/22
Foreign References:
| JP2010278131A | 2010-12-09 | |||
| JP2010074131A | 2010-04-02 | |||
| JP2006332600A | 2006-12-07 | |||
| JP2018152430A | 2018-09-27 | |||
| JP2018098262A | 2018-06-21 | |||
| JP2011124442A | 2011-06-23 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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