Title:
SEMICONDUCTOR LASER AND FABRICATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/103612
Kind Code:
A1
Abstract:
A semiconductor laser and a fabrication method therefor. The method comprises: providing a heat sink motherboard, and cutting the heat sink motherboard to form a plurality of heat sink substrates (300) (S11); providing an epitaxial wafer (200) (S12); bonding the plurality of heat sink substrates (300) to the epitaxial wafer (200) in an array to form a plurality of gaps parallel to the direction of resonant cavities (210) and perpendicular to the direction of the resonant cavities (210) (S13); dividing the epitaxial wafer (200) along the gaps to obtain a plurality of laser chips (S14); and stacking the plurality of laser chips, and coating the plurality of stacked laser chips to form a plurality of semiconductor lasers (S15). The support bars in the prior art are replaced directly with the heat sink substrates (300), thereby saves materials, and reducing the process of welding with the heat sink substrate (300) after coating the support bars and separating again; fabrication is completed directly in one step, thereby simplifying the process and reducing costs.
Inventors:
ZHENG ZHAOZHEN (CN)
CHEN CHANGAN (CN)
CHEN CHANGAN (CN)
Application Number:
PCT/CN2019/111423
Publication Date:
May 28, 2020
Filing Date:
October 16, 2019
Export Citation:
Assignee:
SHENZHEN LASER INST (CN)
International Classes:
H01S5/02
Foreign References:
| JPH0738199A | 1995-02-07 | |||
| CN101894796A | 2010-11-24 | |||
| JPH1093187A | 1998-04-10 | |||
| CN1564403A | 2005-01-12 | |||
| JPH1154597A | 1999-02-26 | |||
| JP2014036057A | 2014-02-24 |
Download PDF:
Previous Patent: GLASS LENS AND LENS MODULE USING SAME
Next Patent: SEMICONDUCTOR LASER CHIP AND PREPARATION METHOD THEREFOR
Next Patent: SEMICONDUCTOR LASER CHIP AND PREPARATION METHOD THEREFOR