Title:
SEMICONDUCTOR LASER, METHOD FOR MANUFACTURING SAME, OPTICAL MODULE, AND OPTICAL TRANSMISSION SYSTEM
Document Type and Number:
WIPO Patent Application WO/2011/021458
Kind Code:
A1
Abstract:
Disclosed is a semiconductor laser provided with a quantum dot active layer (16) which comprises a plurality of quantum dots (38) and in which a region (40) with a high density of quantum dots (38)and a region (42) with a low density thereof are periodically repeated, a diffraction grating layer (14) which is formed on the upper side or lower side of the quantum dot active layer (16) and comprises a diffraction grating (30) consisting of periodic projections and depressions, a lower cladding layer (12) having a first conductivity type (n type), and an upper cladding layer (18) having a second conductivity type (p type) that is a conductivity type reverse to the first conductivity type, the lower cladding layer and the upper classing layer being formed so as to sandwich the quantum dot active layer (16) and the diffraction grating layer (14) therebetween in a vertical direction.
Inventors:
NISHI KENICHI (JP)
KONDO HAYATO (JP)
TANAKA YU (JP)
KONDO HAYATO (JP)
TANAKA YU (JP)
Application Number:
PCT/JP2010/062078
Publication Date:
February 24, 2011
Filing Date:
July 16, 2010
Export Citation:
Assignee:
QD LASER INC (JP)
NISHI KENICHI (JP)
KONDO HAYATO (JP)
TANAKA YU (JP)
NISHI KENICHI (JP)
KONDO HAYATO (JP)
TANAKA YU (JP)
International Classes:
H01S5/12; G02B6/42
Domestic Patent References:
| WO2003073570A1 | 2003-09-04 |
Foreign References:
| JP2006080122A | 2006-03-23 | |||
| JPH06112122A | 1994-04-22 |
Attorney, Agent or Firm:
KATAYAMA, SHUHEI (JP)
Shuhei Katayama (JP)
Shuhei Katayama (JP)
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