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Title:
SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/193679
Kind Code:
A1
Abstract:
The present invention comprises: an active layer ridge (6) in which an n-type cladding layer (2), an active layer (3), a first p-type cladding layer (4) and a second n-type block layer (5) are stacked in said order on an n-type InP substrate (1), and which is formed protruding from a position that is lower than the active layer (3); an embedding layer (7) in which both sides of the active layer ridge (6) are embedded to a position that is higher than the active layer (3); a first n-type block layer (8) stacked on the surface side of the embedding layer (7) at both sides of the active layer ridge (6); and a second p-type cladding layer (10) in which the first n-type block layer (8) and an end part of the active layer ridge (6) are embedded. A current constriction window (9) through which Hall current passes is provided at the center of the second n-type block layer (5) at the top part of the active layer ridge (6).

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Inventors:
FUCHIDA AYUMI (JP)
NAKAMURA NAOKI (JP)
SAKAINO GO (JP)
Application Number:
PCT/JP2018/014410
Publication Date:
October 10, 2019
Filing Date:
April 04, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/227
Foreign References:
JP2015029025A2015-02-12
JP2011249766A2011-12-08
US20110164641A12011-07-07
JP2000082861A2000-03-21
JP2000049413A2000-02-18
JPH05129723A1993-05-25
JPH04293286A1992-10-16
JPH01300581A1989-12-05
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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