SEMICONDUCTOR LASER AND MODULE ELEMENT - NIPPON TELEGRAPH & TELEPHONE

Title:

SEMICONDUCTOR LASER AND MODULE ELEMENT

Document Type and Number:

WIPO Patent Application WO/2023/135629

Kind Code:

A1

Abstract:

A semiconductor laser (10) according to the present invention comprises a first clad layer (102), an active layer (104), and a second clad layer (106) in order on a substrate (101), a ridge part disposed in the waveguide direction in the second clad layer and a heater (113) disposed near the ridge part are provided, and the oscillation wavelength is 1.6-2.4 µm. Between the first clad layer and the active layer, and the active layer and the second clad layer, respectively, a first guide layer (103), a second guide layer (105), a diffraction grating (112) at the boundary between the first clad layer and the first guide layer or the boundary between the second clad layer and the second guide layer, and an insulating film (111) on the surface of the second guide layer other than the ridge part are provided, and the heater is disposed on the insulating film.　As a result, the present invention can provide a semiconductor laser that performs wavelength sweeps at fast speed and over a wide wavelength range.

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Inventors:

MITSUHARA MANABU (JP)
KOBAYASHI WATARU (JP)

Application Number:

PCT/JP2022/000487

Publication Date:

July 20, 2023

Filing Date:

January 11, 2022

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE (JP)

International Classes:

H01S5/024; H01S5/22; H01S5/343

Foreign References:

JP2014192248A	2014-10-06
JP2000294869A	2000-10-20
JP2006278397A	2006-10-12
JP2018019086A	2018-02-01
JP2016197616A	2016-11-24
JP2000277869A	2000-10-06
JP2001235418A	2001-08-31