Title:
SEMICONDUCTOR LASER AND TWO-CHANNEL LASER ARRAY
Document Type and Number:
WIPO Patent Application WO/2024/057358
Kind Code:
A1
Abstract:
A semiconductor laser (10) according to the present invention comprises a distributed feedback (DFB) region (100) including an active layer (105) and a uniform grating (104) and two distributed Bragg reflector (DBR) region (200, 300) including an core layer (103) and a uniform grating (104) and optically coupled to respective ends of the DFB region (100) and lengths of the DFB region (100) and the DBR regions (200, 300) in a waveguide direction are set so that a photon-photon resonance frequency is in a range from 40 GHz to 50 GHz when an operating temperature is between 25 degrees and 75 degrees. The semiconductor laser of the present invention optimizes a PPR effect and enables maximizing a modulation bandwidth.
Inventors:
DIAMANTOPOULOS NIKOLAOS-PANTELEIMON (JP)
MATSUO SHINJI (JP)
MATSUO SHINJI (JP)
Application Number:
PCT/JP2022/034003
Publication Date:
March 21, 2024
Filing Date:
September 12, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/125; H01S5/12
Foreign References:
| JP2019091806A | 2019-06-13 | |||
| US20170256912A1 | 2017-09-07 | |||
| JP2017017077A | 2017-01-19 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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