Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO2004112208
Kind Code:
B1
Abstract:
A heavy-hole well (309) and a light-hole well (310) are formed in a well layer. The continuous state (311) of the light holes in a barrier layer is lower than the quantum state (312) of the heavy holes in the well layer. Further, the quantum state of the light holes in the well layer is almost equal to the continuous state (311) of the light holes in the barrier layer. Thus, a strained quantum well layer is formed by alternating strained well layer and a barrier layer, and the differential gain of a semiconductor laser which has such a strained quantum well layer serving as an active layer can be enhanced.
Inventors:
KOBAYASHI RYUJI (JP)
HUANG YIDONG (JP)
NAKAMURA TAKAHIRO (JP)
HUANG YIDONG (JP)
NAKAMURA TAKAHIRO (JP)
Application Number:
PCT/JP2004/008549
Publication Date:
February 24, 2005
Filing Date:
June 11, 2004
Export Citation:
Assignee:
NEC CORP (JP)
KOBAYASHI RYUJI (JP)
HUANG YIDONG (JP)
NAKAMURA TAKAHIRO (JP)
KOBAYASHI RYUJI (JP)
HUANG YIDONG (JP)
NAKAMURA TAKAHIRO (JP)
International Classes:
H01S5/34; H01S5/227; H01S5/343; (IPC1-7): H01S5/343
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