Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2019/116657
Kind Code:
A1
Abstract:
This semiconductor laser is provided with: a core layer having an active layer, and a diffraction grating layer optically coupled to the active layer; and a pair of cladding layers that are disposed so as to sandwich the core layer. A waveguide is formed along the core layer. The semiconductor laser is also provided with: a flat layer that is provided, along the waveguide, continuously from the diffraction grating layer; and a temperature adjustment structure for adjusting the temperature of the flat layer to a temperature different from that of the diffraction grating layer.
Inventors:
TERAKADO TOMOJI (JP)
MATSUHAMA MAKOTO (JP)
SHIBUYA KYOJI (JP)
MATSUHAMA MAKOTO (JP)
SHIBUYA KYOJI (JP)
Application Number:
PCT/JP2018/034153
Publication Date:
June 20, 2019
Filing Date:
September 14, 2018
Export Citation:
Assignee:
HORIBA LTD (JP)
International Classes:
H01S5/062; H01S5/12
Foreign References:
| JPS6178190A | 1986-04-21 | |||
| JPS62245692A | 1987-10-26 | |||
| JPH03235915A | 1991-10-21 | |||
| JP2004023029A | 2004-01-22 | |||
| JPH10321951A | 1998-12-04 | |||
| JP2009054637A | 2009-03-12 | |||
| US5808314A | 1998-09-15 | |||
| JP2017123445A | 2017-07-13 |
Attorney, Agent or Firm:
NISHIMURA, Ryuhei (JP)
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