Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2020/078197
Kind Code:
A1
Abstract:
A semiconductor laser, comprising: one or more semiconductor chips (1-1), the length of a gain region (1-11A) of a light emitting unit (1-11) of each semiconductor chip (1-1) in a slow axis direction ranging from 1 mm to 10 cm; a laser resonant cavity, used for adjusting a semiconductor laser emitted from the light emitting unit (1-11) to form resonance in the slow axis direction so that the size of the gain region (1-11A) of the light emitting unit (1-11) in the slow axis direction matches a fundamental mode spot radius omega0; and a fast axis collimating element (FAC), disposed in the laser resonant cavity and used for collimating the laser emitted from the light emitting unit (1-11) in a fast axis direction. On the one hand, the output capability of high power in a gain region is improved, and on the other hand, the beam quality is further improved, and the high beam quality output of M2<2 is achieved.
Inventors:
WANG XIAOJUN (CN)
ZONG NAN (CN)
PENG QINJUN (CN)
XU ZUYAN (CN)
YANG JING (CN)
ZONG NAN (CN)
PENG QINJUN (CN)
XU ZUYAN (CN)
YANG JING (CN)
Application Number:
PCT/CN2019/108481
Publication Date:
April 23, 2020
Filing Date:
September 27, 2019
Export Citation:
Assignee:
TECHNICAL INST PHYSICS & CHEMISTRY CAS (CN)
International Classes:
H01S5/14; H01S3/082
Domestic Patent References:
WO2001059895A1 | 2001-08-16 |
Foreign References:
CN109193342A | 2019-01-11 | |||
EP0955707A2 | 1999-11-10 | |||
CN1879269A | 2006-12-13 | |||
CN102082396A | 2011-06-01 |
Other References:
W. KIRCHNERSUN WEN: "Solid Laser Engineering"
See also references of EP 3696925A4
See also references of EP 3696925A4
Attorney, Agent or Firm:
BEIJING LINKAW PATENT ATTORNEY LAW FIRM (CN)
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