Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2020/262710
Kind Code:
A1
Abstract:
A semiconductor laser comprising: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and a pulse injection means that injects excitation energy over sub-nanosecond durations into the optical resonator, wherein the light-emitting layer has an at least five-period multiple quantum well structure, and generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.
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Inventors:
NAKAMURA TAKAHIRO (JP)
KURODA RYUNOSUKE (JP)
AKIYAMA HIDEFUMI (JP)
KIM CHANGSU (JP)
ITO TAKASHI (JP)
NAKAMAE HIDEKAZU (JP)
KURODA RYUNOSUKE (JP)
AKIYAMA HIDEFUMI (JP)
KIM CHANGSU (JP)
ITO TAKASHI (JP)
NAKAMAE HIDEKAZU (JP)
Application Number:
PCT/JP2020/031626
Publication Date:
December 30, 2020
Filing Date:
August 21, 2020
Export Citation:
Assignee:
AIST (JP)
International Classes:
H01S5/04; H01S5/042; H01S5/10; H01S5/34
Foreign References:
JP2013105813A | 2013-05-30 | |||
JP2012094622A | 2012-05-17 | |||
JP2009049310A | 2009-03-05 | |||
JP2003031897A | 2003-01-31 | |||
JP2005039099A | 2005-02-10 | |||
JPS59104191A | 1984-06-15 |
Other References:
See also references of EP 3993184A4
Attorney, Agent or Firm:
FUKUOKA Masahiro (JP)
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