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Patent Searching and Data


Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2020/262710
Kind Code:
A1
Abstract:
A semiconductor laser comprising: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and a pulse injection means that injects excitation energy over sub-nanosecond durations into the optical resonator, wherein the light-emitting layer has an at least five-period multiple quantum well structure, and generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.

Inventors:
NAKAMURA TAKAHIRO (JP)
KURODA RYUNOSUKE (JP)
AKIYAMA HIDEFUMI (JP)
KIM CHANGSU (JP)
ITO TAKASHI (JP)
NAKAMAE HIDEKAZU (JP)
Application Number:
PCT/JP2020/031626
Publication Date:
December 30, 2020
Filing Date:
August 21, 2020
Export Citation:
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Assignee:
AIST (JP)
International Classes:
H01S5/04; H01S5/042; H01S5/10; H01S5/34
Foreign References:
JP2013105813A2013-05-30
JP2012094622A2012-05-17
JP2009049310A2009-03-05
JP2003031897A2003-01-31
JP2005039099A2005-02-10
JPS59104191A1984-06-15
Other References:
See also references of EP 3993184A4
Attorney, Agent or Firm:
FUKUOKA Masahiro (JP)
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