Title:
SEMICONDUCTOR LAYER, OSCILLATION ELEMENT, AND SEMICONDUCTOR LAYER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/225855
Kind Code:
A1
Abstract:
This semiconductor layer comprises a p-n junction in which an n-type semiconductor (Al2O3(n-type )) having a donor level formed therein due to an excessive content of aluminum (Al) in an aluminum oxide film (Al2O3) is joined to a p-type semiconductor (Al2O3(p-type )) having an acceptor level formed therein due to an excessive content of oxygen (O) in an aluminum oxide film (Al2O3).
Inventors:
ASHIZAWA KOICHI (JP)
Application Number:
PCT/JP2018/022013
Publication Date:
December 13, 2018
Filing Date:
June 08, 2018
Export Citation:
Assignee:
UACJ CORP (JP)
International Classes:
H01L29/861; H01L29/24; H01L29/868
Domestic Patent References:
| WO2018004009A1 | 2018-01-04 | |||
| WO2016175251A1 | 2016-11-03 |
Foreign References:
| JPH09215755A | 1997-08-19 | |||
| JP2016051825A | 2016-04-11 |
Other References:
See also references of EP 3637476A4
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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