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Patent Searching and Data


Title:
SEMICONDUCTOR LAYER, OSCILLATION ELEMENT, AND SEMICONDUCTOR LAYER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/225855
Kind Code:
A1
Abstract:
This semiconductor layer comprises a p-n junction in which an n-type semiconductor (Al2O3(n-type )) having a donor level formed therein due to an excessive content of aluminum (Al) in an aluminum oxide film (Al2O3) is joined to a p-type semiconductor (Al2O3(p-type )) having an acceptor level formed therein due to an excessive content of oxygen (O) in an aluminum oxide film (Al2O3).

Inventors:
ASHIZAWA, Koichi (7-2 Otemachi 1-Chome, Chiyoda-k, Tokyo 04, 〒1000004, JP)
Application Number:
JP2018/022013
Publication Date:
December 13, 2018
Filing Date:
June 08, 2018
Export Citation:
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Assignee:
UACJ CORPORATION (7-2 Otemachi 1-Chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
International Classes:
H01L29/861; H01L29/24; H01L29/868
Domestic Patent References:
WO2018004009A12018-01-04
WO2016175251A12016-11-03
Foreign References:
JPH09215755A1997-08-19
JP2016051825A2016-04-11
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (Daiwa Minamimorimachi Building, 2-6 Tenjinbashi 2-chome Kita, Kita-ku, Osaka-sh, Osaka 41, 〒5300041, JP)
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