Title:
SEMICONDUCTOR LIGHT DETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/163965
Kind Code:
A1
Abstract:
This semiconductor light detection element is provided with: a semiconductor part which has a surface comprising a light reception region that receives incident light, and which performs photoelectric conversion of the incident light that is incident on the light reception region; a metal part which is provided on the surface; and a carbon nanotube film which is provided on the light reception region, and wherein a plurality of carbon nanotubes are accumulated. The carbon nanotube film runs on the upper surface of the metal part from the upper surface of the light reception region.
Inventors:
OFUJI KAZUTO (JP)
ITO MASASHI (JP)
SHIBAYAMA KATSUMI (JP)
SAKAMOTO AKIRA (JP)
ITO MASASHI (JP)
SHIBAYAMA KATSUMI (JP)
SAKAMOTO AKIRA (JP)
Application Number:
PCT/JP2018/007843
Publication Date:
September 13, 2018
Filing Date:
March 01, 2018
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L31/10; B82Y20/00; C01B32/158; G01J1/02; H01L27/148
Domestic Patent References:
| WO2014133183A1 | 2014-09-04 |
Foreign References:
| JP2009253289A | 2009-10-29 | |||
| JP2003303978A | 2003-10-24 | |||
| JP2006245566A | 2006-09-14 | |||
| JP2005332991A | 2005-12-02 | |||
| JP2015073006A | 2015-04-16 | |||
| US20090140167A1 | 2009-06-04 | |||
| US20080251723A1 | 2008-10-16 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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