Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/029915
Kind Code:
A1
Abstract:
A semiconductor light emitting device comprising ZnO single-crystal substrate
(12) having as a substrate face a crystal face of face orientation less influenced
by piezoelectric field; lattice matching layer (13) superimposed on the substrate
face of the ZnO single-crystal substrate (12) and lattice-matched to the ZnO
single-crystal substrate; active layer (15) of gallium indium nitride [InxGa1-xN
(0
Inventors:
SHINAGAWA, Tatsuyuki (2-3, Marunouchi 2-chome, Chiyoda-k, Tokyo 22, 1008322, JP)
品川 達志 (〒22 東京都千代田区丸の内２丁目２番３号 古河電気工業株式会社内 Tokyo, 1008322, JP)
ISHII, Hirotatsu (2-3, Marunouchi 2-chome, Chiyoda-k, Tokyo 22, 1008322, JP)
品川 達志 (〒22 東京都千代田区丸の内２丁目２番３号 古河電気工業株式会社内 Tokyo, 1008322, JP)
ISHII, Hirotatsu (2-3, Marunouchi 2-chome, Chiyoda-k, Tokyo 22, 1008322, JP)
Application Number:
JP2007/067505
Publication Date:
March 13, 2008
Filing Date:
September 07, 2007
Export Citation:
Assignee:
THE FURUKAWA ELECTRIC CO., LTD. (2-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 22, 1008322, JP)
古河電気工業株式会社 (〒22 東京都千代田区丸の内２丁目２番３号 Tokyo, 1008322, JP)
SHINAGAWA, Tatsuyuki (2-3, Marunouchi 2-chome, Chiyoda-k, Tokyo 22, 1008322, JP)
品川 達志 (〒22 東京都千代田区丸の内２丁目２番３号 古河電気工業株式会社内 Tokyo, 1008322, JP)
古河電気工業株式会社 (〒22 東京都千代田区丸の内２丁目２番３号 Tokyo, 1008322, JP)
SHINAGAWA, Tatsuyuki (2-3, Marunouchi 2-chome, Chiyoda-k, Tokyo 22, 1008322, JP)
品川 達志 (〒22 東京都千代田区丸の内２丁目２番３号 古河電気工業株式会社内 Tokyo, 1008322, JP)
International Classes:
H01S5/323
Attorney, Agent or Firm:
MATSUSHITA, Makoto (Apuri Shinyokohama Building 5F, 2-5-19 Shinyokohama,Kohoku-ku, Yokohama-shi, Kanagawa 33, 2220033, JP)
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