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Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/017126
Kind Code:
A1
Abstract:
The present invention attempts to expand the valid light-emission area by minimizing the frame regions in the periphery of unit light-emission regions as much as possible. A semiconductor light-emitting device (1) wherein: a light-emission function part (10A) on which multiple unit light-emission regions (1U) are arranged is disposed on a semiconductor substrate (10); the unit light-emission regions (1U) are provided with a pn junction part, in which the semiconductor substrate (10) functions as a common semiconductor layer, as the light-emission part; and the unit light-emission regions (1U) disposed adjacent to one another among the multiple unit light-emission regions (1U) are provided with light-emission parts emitting light of different colors.

Inventors:
KAJIYAMA KOICHI (JP)
NASUKAWA TOSHIMICHI (JP)
KANAO MASAYASU (JP)
ISHIKAWA SHIN (JP)
Application Number:
PCT/JP2013/059578
Publication Date:
January 30, 2014
Filing Date:
March 29, 2013
Export Citation:
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Assignee:
V TECHNOLOGY CO LTD (JP)
International Classes:
H01L33/34; F21S2/00; G09F9/33
Foreign References:
JP2004311933A2004-11-04
Other References:
TADASHI KAWAZOE ET AL.: "A high- efficiency and high-power light emitting diode by a bulk Si crystal", OPTRONICS, no. 363, 10 March 2012 (2012-03-10), pages 85 - 88
T.KAWAZOE ET AL.: "Highly efficient and broadband Si homojunction structured near- infrared light emitting diodes based on phonon- assisted optical near-field process", APPL. PHYS. B, vol. 104, no. 4, 2011, pages 747 - 754
TADASHI KAWAZOE ET AL.: "Dressed Koshi o Riyo shita Homo Setsugo Si-LED no Sakusei Oyobi Dosa Genri to Kensho Jikken", EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES DAI 59 KAI, vol. 3, 18 March 2012 (2012-03-18), pages 182
Attorney, Agent or Firm:
EICHI Patent & Trademark Corp. et al. (JP)
Patent business corporation Wisdom international patent firm (JP)
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