Title:
SEMICONDUCTOR LIGHT EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2015/053600
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor light emitting diode, and the semiconductor light emitting diode comprises: a plurality of semiconductor layers comprising a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, for generating light through recombination of electrons and holes; a first electrode portion which electrically communicates with the first semiconductor layer and supplies electrons or electron holes; a second electrode portion which electrically communicates with the second semiconductor layer and supplies remaining electrons or electron holes not supplied by the first electrode portion; and a nonconductive reflective film provided with a first opening, wherein either the first electrode portion or the second electrode portion comprises a lower electrode, which is an island type lower electrode corresponding to the first opening and of which a portion is exposed through the first opening, and a connective electrode provided on top of the nonconductive reflective film and electrically connected to the lower electrode through the first opening.
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Inventors:
JEON SOO KUN (KR)
JIN GEUN MO (KR)
BAEK SEUNG HO (KR)
JIN GEUN MO (KR)
BAEK SEUNG HO (KR)
Application Number:
PCT/KR2014/009591
Publication Date:
April 16, 2015
Filing Date:
October 13, 2014
Export Citation:
Assignee:
SEMICON LIGHT CO LTD (KR)
International Classes:
H01L33/36; H01L33/10
Foreign References:
| KR20110031099A | 2011-03-24 | |||
| KR20130008478A | 2013-01-22 | |||
| JP2008282930A | 2008-11-20 | |||
| KR20120018080A | 2012-02-29 |
Attorney, Agent or Firm:
AN, SANG JEONG (KR)
안상정 (KR)
안상정 (KR)
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